Scientists The Russian Technological University MIREA has created a unique field-effect transistor based on diamond. The development promises to surpass existing analogues in performance and reliability, especially in extreme conditions.
MIREA specialists presented an innovative field-effect transistor, the basis of which was a crystalline perfect diamond layer less than 1 micron thick. The technology of growing diamonds using thermochemical processing made it possible to minimize surface defects, which significantly improved the electrical properties of the device.
As noted by the Russian Ministry of Education and Science, the new transistor is capable of effectively controlling electric current through a semiconductor signal. Its key advantages are high temperature resistance, radiation resistance and energy efficiency. According to the developers, the device is 10-15% superior to existing analogues in performance.
Alexander Altukhov, head of the Diamond Microwave Electronics Laboratory, emphasized that device especially important for applications in extreme conditions. Traditional silicon transistors quickly fail when exposed to high temperatures and radiation, while diamond analogues demonstrate exceptional durability.
Application prospects:
- Space technology
- Nuclear power
- Radar stations
- Medical equipment
- Industrial electronics
The development of MIREA opens up new opportunities for creating sustainable and high-performance electronics capable of operating in the most harsh conditions. The introduction of diamond transistors can significantly improve the reliability of equipment in critical industries.
Source: neftegaz.ru
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